ABB 5SHY3545L0009 3BHB013085R0001 3BHE0096 电源模块详细介绍

ABB 5SHY3545L0009 3BHB013085R0001 3BHE0096 电源模块

    5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50％，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.IGCT触发功率小，可以把触发及状态监视电路和IGCT管芯做成一个整体，5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101通过两根光纤输入触发信号、输出工作状态信号。IGCT将 GTO技术与现代功率晶体管IGBT的优点集于一身，利用大功率关断器件可简单可靠地串联这一关键技术，使得IGCT在中高压领域以及功率在 0.5MVA～100MVA的大功率应用领域尚无真正的对手。IGCT损耗低、开关快速等这些优点***了它能可靠、高效率地用于300 kVA～10MVA变流器，而不需要串联或并联。在串联时，逆变器功率可扩展到100MVA。虽然高功率的IGBT模块具有一些优良的特性，5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101如能实现di/dt和dv/dt 的有源控制、有源箝位、易于实现短路电流保护和有源保护等。但因存在着导通高损耗、损坏后造成开路以及无长期可靠运行数据等缺点，限制了高功率IGBT模块在高功率低频变流器中的实际应用。因此IGCT将成为高功***电压变频器的功率器件。

ABB 5SHY3545L0009 3BHB013085R0001 3BHE0096 电源模块

ABB 5SHY3545L0009 3BHB013085R0001 3BHE0096 Power module

5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 Integrated Gate Commutated thyristor IGCT(Intergrated Gate Commutated Thyristors is a new type of power semiconductor device introduced in 1996 for use in giant power electronics packages. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination. IGCT trigger power is small, the trigger and condition monitoring circuit and IGCT core can be made into a whole, 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 through two optical fibers input trigger signal, output working status signal. IGCT combines the advantages of GTO technology and modern power transistor IGBT in one, using the key technology of simple and reliable series series of high-power turn-off devices, making IGCT in the field of high-voltage and high-power applications with power between 0.5MVA and 100MVA without real rivals. The advantages of low loss and fast switching of IGCT ensure that it can be used reliably and efficiently in 300kVA ~ 10MVA converters without series or parallel connection. In series, the inverter power can be extended to 100MVA. Although the high power IGBT module has some excellent characteristics, 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 If you can achieve di/dt and dv/dt active control, active clamping, easy to achieve short circuit current protection and active protection. However, due to the defects of high conduction loss, open circuit caused by damage and no long-term reliable operation data, the practical application of high power IGBT module in high power low frequency converter is limited. Therefore, IGCT will become the preferred power device for high power and high voltage inverter.

ABB 5SHY3545L0009 3BHB013085R0001 3BHE0096 Power module